DU2820S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz

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RF MOSFET Power Transistor, 2OW, 28V
2 - 175 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
DU2820S
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
V _0s
65
V _GS
20
1 4,s 1
24
p rJ
62.5
TJ
200
T _STG
-55 to +150
6JC
2.8
V
V
tA 1
W
“C
“C
“Cl-W
J
1 4.04 1 4.55 [ X59 1 .l79
1 K ^{1 6.58 1 7.39 I .259 I 291 I}
L 1 .I0 1 x5 1 404 1 Jo6
IElectrical ^{Characteristics}
Parameter
Drain-Source Breakdown Voltaae
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
at 25°C
Symbol
BV..,,
‘ass
‘GSS
V _0sr-v
GM
C _15s
C _OS5
C _RSS
GP
‘70
VSWR-T
Min
Max Units
Test Conditions
65
-
V
V,.=O.O V, I,,=50 mA
1.0
mA v,,=28.0 v, v,,=o.o v
1.0
fl
vGs=20.0 v. v,,=o.o v
2.0
6.0
V
VDs=l 0.0 V, IDS=100.0 mA
500
-
mS V&O.0 V, 1,,=100.0 mA, AV,,=l .O V, 80 ps Pulse
45
pF v,,=28.0 v, F=l .o MHZ
40
pF V,,=28.0 V, F=l .O MHz
a
PF ^{V,,=28.0 V, F=l .O MHz}
13
-
dB vD,=2a.o V, I,,=100 mA, P,,f20 W, F=175 MHz
60
-
% v,,=28.0 v, I,,=100 mA, PO,=20 W, F=l75 MHz
-
3O:l
-
v,,=28.0 V. I,,=1 00 mA, P,,1=;20 W, F=l75 MHz
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
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