DU28200M Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

an AMP company
RF MOSFET Power Transistor, 2OOW,28V
2 - 175 MHz
DU28200M
Features
N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
P&--4
v2.00
I
Absolute Maximum Ratings at 25°C
Parameter
I ^{Drain-SourceVoltage}
Gate-Source Voltage
Drain-Source Current
I Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
I Symbol I ^Rating
1 Units 1
( V,, (
65
V
20
OS
‘DS
20
Iv I
V
A
1 P,
TJ
T
STG
/
389
200
1W 1
“C
-65 to +150
“C
Electrical Characteristics at 25°C
Parameter
Test Conditions
Drain-Source Breakdown Voltage
BVDss 65
-
V V,,=O.O V, I,,=250 mA
Drain-Source Leakage Current
‘cm
5.0 n-IA V,,=28.0 V, V,,=O.O V‘
Gate-Source Leakage Current
‘GSS
5.0 pA v,,=20.0 v, V,stO.O v
1 Gate Threshold Voltage
I vG,rr,, ^{1 2.0 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA}
I
FonvardTransconductance
GM
2.5
-
S V,,=lO.O V, I,,=50 A, ~v,,=l .O V, 80~ Pulse’
Input Capacitance
C _ISS
-
225 pF Vr,,=28.0 V, F=l .OMHz’
Output Capacitance
C_OSS
200 pF V,,=28.0 V, F=l .OMHz’
( Reverse Capacitance
I CFSS ^{1 - ( 40 1 pF 1 V,,=28.0 V, F=l.O MHz’}
I
Power Gain
GP
13
-
dB V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz
Drain Efficiency
%
55
-
% V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz
Load MismatchTolerance
VSWR-T
-
lo:1
- V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz
* Per Side
Specifications Subject to Change Without Notice.