DU28120T Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz

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RF MOSFET
2 - 175 MHz
Power
Transistor,
12OW, 28V
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
DU28120T
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
V _DS
65
V
Vcc
20
V
Drain-Source Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
I
‘DS
PD
TJ
T _STG
8JC
I
24
269
200
-55 to+150
0.65
I*
I
w
“C
“C
“C/W
Electrical Characteristics at 25°C
LETTER -
DIN m
A
24.64
WI
24.99
rmcs
ml
lax
.970
se0
B
lB29
1054
720
no
I c I 2121 I 21.97 I 83.5 I 865 I
I D I l2.60 I 1285 I A% I .506 I
E
622
640
245
255
F
ml
4s
.tio
.x0
G
5.33
559
210
220
H
10s
x33
200
2lo
1 J 1 3.05 I 3.30 I d20 1 .lr) i
N
.lO
.lS
Input Capacitance
Output Capacitance
Reverse Capacitance
PowerGain
Drain Efficiency
Load Mismatch Tolerance
C _ES
C _oss
C _RSS
GP
‘ID
VSWR-T
270
pF V,,=28.0 V, F=l .O MHz
240
pF V,,=28.0 V, Fz1.0 MHz
48
pF V,,=28.0 V, F=l .O MHz
13
-
dB Vb,=28.0 V. I,,=600 mA, P,,,.=120.0 W, F=175 MHz
60
-
% Vbb~28.0 V, I,,=600 mA, PO,?1 20.0 W, F=l75 MHz
-
3O:l
-
V,,=28.0 V, I,,=600 mA, PO,,-120.0 W, F=175 MHz
Specifications Subject to Change Wiihout Notice.
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