DU1230S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz

=
------
=-
==
an AMP company
RF MOSFET Power Transistor, 3OW, 12V
2 - 175 MHz
DUI 230s
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications
..
Absolute Maximum Ratings at 25°C
Parameter
1 Symbol 1 Rating
1 Units 1
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
1 Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V _DS
40
V _0s
20
‘Ds
8
I PO I
175
TJ
200
TSTG -55to+150
I BJCI 1
V
V
A
I wI
“C
“C
I “C/wI
1 E 1 6.22 1 6.48 1 245 1 255 1
F
5.64
5.79
222
22s
G 1 2.92 1 3.30 1 .llS 1 ,130
Electrical Characteristics at 25°C
Input Capacitance
Output Capacitance
ReverseCapacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
V,,=12.0 V, F=l.O MHz
C_0%
120 pF V&2.0 V, F=l .OMHz
C _Rss
24
pF V&2.0 V, F=l .OMHz
GP
9.0
-
dB Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
9D
50
-
% V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
VSWR-T
-
3O:l
- V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz
SpecificationsSubjectto ChangeWithoutNotice.
North America:
Tel. [phone]
Fax [phone]
n Asia/Pacific: Tel. [phone]
Fax [phone]
MIA-COM, Inc.
n Europe: Tel. [phone]
Fax [phone]