DU1215S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz

RF MOSFET Power Transistor, ISW, 12V
2 - 175 MHz
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Bipolar Devices
l Specifically Designed for 12 Volt Applications
.w
DU1215S
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
OSS ^CISS
50
C
60
Gss
-
12
GP
9.5
-
%
60
-
VSWR-T
-
3O:l
pF VD,=12.0 V, F=l .OMHz
pF V&2.0 V, F=l .OMHz
pF V&2.0 V, F=l .OMHz
dB V,,=12.0 V, lDcl=lOOmA. PO*1 5 W, F=175 MHz
% VD,=12.0 V, l&O0 mA, PO,=15 W, F=175 MHZ
- VDD=12.0V, I,,=100 mA, PO,=15 W, F=l75 MHz
Specifications Subject to Change Without Notice.
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