AM42-0040 Datasheet, PDF (1/4 Pages) Tyco Electronics – GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz

GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM4^AM2-⁴0^2-0⁰4⁰⁴0⁰
GaAs MMIC VSAT Power Amplifier, 2W
5.9 - 6.4 GHz
Features
• High Linear Gain: 30 dB Typ.
• High Saturated Output Power: +33 dBm Typ.
• High Power Added Efficiency: 26% Typ.
• 50Ω Input/Output Broadband Matched
• High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0040 is designed for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.
M/A-COM’s AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.
CR-15
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
Ordering Information
Part Number
AM42-0040
Package
Ceramic Bolt Down Package
Electrical Specifications: T_A = +25°C, V_DD = +9V, V_GG adjusted for I_DD = 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter
Abbv.
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
Input VSWR
Output VSWR
Output Power
Output Power vs. Frequency
Output Power vs. Temperature
(with respect to T_A=+25°C)
Drain Bias Current
Gate Bias Voltage
Gate Bias Current
Thermal Resistance
Second Harmonic
Third Harmonic
G_L
VSWR_IN
VSWR_OUT
P_SAT
P_SAT
P_SAT
I_DD
V_GG
Ι_GG
θ_JC
f₂
f₃
P_IN ≤ -10 dBm
P_IN ≤ -10 dBm
P_IN ≤ -10 dBm
P_IN = +10 dBm, I_DD=1050 mA Typ.
P_IN = +10 dBm, I_DD=1050 mA Typ.
P_IN = +10 dBm, I_DD=1050 mA Typ.
T_A= -40°C to +70°C
P_IN = +10 dBm
P_IN = +10 dBm, I_DD=1050 mA Typ.
P_IN = +10 dBm, I_DD=1050 mA Typ.
25°C Heat Sink
P_IN = +10 dBm, I_DD=1050 mA Typ.
P_IN = +10 dBm, I_DD=1050 mA Typ.
dB
—
—
dBm
dB
dB
mA
V
mA
°C/W
dBc
dBc
27
—
—
31.7
—
—
900
-2.4
—
—
—
—
30
2.3:1
3.0:1
33.0
1.0
±0.4
1050
-1.2
5
5.6
-35
-45
—
2.7:1
—
34.3
1.5
—
1100
-0.4
20
—
—
—
M/A-COM Division of AMP Incorporated s North America: Tel. [phone], Fax [phone] s Asia/Pacific: Tel.[phone], Fax [phone]
s Europe: Tel. [phone], Fax[phone]
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00