AM42-0007-DIE Datasheet, PDF (1/2 Pages) Tyco Electronics – GaAs MMIC VSAT Power Amplifier 2W 14.0 - 14.5GHz

GaAs MMIC Power Amplifier, 2 W,
14.0 - 14.5 GHz
Features
• High Linear Gain: 22 dB Typical.
• High Saturated Output Power: +33 dBm Typical
• High Power Added Efficiency: 22% Typical
• High P1dB: +32 dBm Typical
• 50 Ω Input / Output Broadband Matched
• Integrated Output Power Detector
• High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0007-DIE is a three stage MMIC
linear power amplifier fabricated on a mature 0.5
micron MBE based GaAs process. The AM42-0007-
DIE employs a fully matched chip with integral bias
networks and output power detector. This GaAs
MMIC power amplifier is ideally suited for used as
an output stage or driver in applications for VSAT
applications.
AM42-0007-DIE
V4
Functional Schematic
Ordering Information
Part Number
AM42-0007-DIE
Package
DIE
Absolute Maximum Ratings ^1,2
Parameter
V_DD
V_GG
Power Dissipation
RF Input Power
ChannelTemperature
Storage Temperature
Absolute Maximum
+12 Volts
-10 Volts
17.9 W
+23 dBm
+150 °C
-65 °C to +150 °C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. Back of die temperature (T_B) = +25°C.
Typical Bias Configuration ^3,4
3. Nominal bias is obtained by first connecting –5 volts to pin V_GG
(resistor network used) followed by connecting +9 volts to pin
V_DD. Note sequence.
4. It is recommended that the die be mounted with Au/Sn eutectic
performs for good RF ground and thermal interface.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
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