A29-1_1 Datasheet, PDF (1/2 Pages) Tyco Electronics – Cascadable Amplifier 10 to 1500 MHz

Cascadable Amplifier
10 to 1500 MHz
Features
• HIGH OUTPUT POWER: +22 dBm (TYP.)
• HIGH THIRD ORDER I.P.: +32 dBm (TYP.)
Product Image
Description
The A29-1 RF amplifier is a discrete thin film hybrid design, which
incorporates the use of thin film manufacturing processes for
accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. An active DC biasing network is used for temperature-
stable performance, in addition to an RF Choke, used for power
supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed,
and MIL-STD-883 environmental screening is available.
A29-1/ SMA29-1
V3
Ordering Information
Part Number
A29-1
SMA29-1
CA29-1
Package
TO-8
Surface Mount
SMA Connectorized
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
Units
MHz
dB
dB
dB
dB
dBm
dBm
Typical
25ºC
10-1600
9.0
±0.2
14
5.5
22.0
+32
Guaranteed
0º to 50ºC -54º to +85ºC*
10-1500
10-1500
8.5
7.5
±0.5
±1.0
6.5
7.0
20.0
19.0
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+17 V
Continuous Input Power
15.5 dBm
Short Term Input power
(1 minute max.)
100 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +15 V_DC
IP2
dBm
+49
Parameter
Rating
Second Order Harmonic IP dBm
+57
VSWR Input / Output (max)
1.6:1 / 1.6:1 1.9:1 / 1.9:1
DC Current @ 15 Volts (max) mA
90
94
2.0:1 / 2.0:1
99
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
100ºC/W
0.966 W
+96ºC
* Over temperature performance limits for part number CA29-1, guaranteed from 0^oC to +50^oC only.
1
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