A18-1_1 Datasheet, PDF (1/2 Pages) Tyco Electronics – Cascadable Amplifier 10 to 1000 MHz

Cascadable Amplifier
10 to 1000 MHz
Features
• HIGH DYNAMIC RANGE
• HIGH OUTPUT POWER: +16 dBm (TYP.)
• HIGH THIRD ORDER I.P.: +30 dBM (TYP.)
• LOW NOISE: 3.8 dB (TYP.)
Description
The A18-1 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
Product Image
A18-1 / SMA18-1
V3
Ordering Information
Part Number
A18-1
SMA18-1
CA18-1
Package
TO-8
Surface Mount
SMA Connectorized
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Units
Typical
25ºC
Guaranteed
0º to 50ºC -54º to +85ºC*
Parameter
Storage Temperature
Absolute
Maximum
-62ºC to +125ºC
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
MHz
dB
dB
dB
dB
dBm
dBm
5-1100
14.7
±0.3
17
3.8
16.0
+30
10-1000
14.0
±0.5
5.0
15.0
10-1000
13.5
±1.0
5.5
14.5
Case Temperature
DC Voltage
Continuous Input Power
Short Term Input power
(1 minute max.)
Peak Power (3 µsec max.)
“S” Series Burn-In
Temperature (case)
+125ºC
+17 V
+13 dBm
50 mW
0.5 W
+125ºC
Thermal Data: V_CC = +15 V_DC
IP2
dBm
+42
Parameter
Rating
Second Order Harmonic IP dBm
+45
VSWR Input / Output (max)
1.5:1 / 1.5:1 1.8:1 / 1.8:1
DC Current @ 15 Volts (max) mA
44
46
2.0:1 / 2.0:1
48
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
145ºC/W
0.4 W
+58ºC
* Over temperature performance limits for part number CA18-1, guaranteed from 0^oC to +50^oC only.
1
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