2N6439 Datasheet, PDF (1/6 Pages) Motorola, Inc – 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
• Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double
Match Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
Order this document
by 2N6439/D
2N6439
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
P_D
T_stg
Value
33
60
4.0
146
0.83
–65 to +200
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS* (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Symbol
R_θJC
Min
Max
1.2
Typ
Max
Unit
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, I_B = 0)
V_(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, V_BE = 0)
V_(BR)CES
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 5.0 mAdc, I_C = 0)
V_(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
—
—
2.0
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
1