MRF154_15 Datasheet, PDF (8/9 Pages) M/A-COM Technology Solutions, Inc. – Broadband RF Power MOSFET

MRF154
Broadband RF Power MOSFET
600W, to 80MHz, 50V
CIRCUIT CONSIDERATIONS
At high power levels (500 W and up), the circuit layout
becomes critical due to the low impedance levels and high
RF currents associated with the output matching. Some of
the components, such as capacitors and inductors must
also withstand these currents. The component losses are
directly proportional to the operating frequency. The manu-
facturers
M/A-COM Products
Released - Rev. 07.07
specifications on capacitor ratings should be consulted on
these aspects prior to design.
Push–pull circuits are less critical in general, since the
ground referenced RF loops are practically eliminated, and
the impedance levels are higher for a given power output.
High power broadband transformers are also easier to de-
sign than comparable LC matching networks.
8
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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changes to the product(s) or information contained herein without notice.