MAGX-000035-09000P Datasheet, PDF (8/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC D-Mode Transistor Technology Common-Source Configuration

MAGX-000035-09000P
GaN Wideband 90 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Rev. V3
Applications Section
Thermal Performance: Freq. = 1.6 GHz, T_C = 85°C, V_DD = +50 V, I_DQ = 100 mA, Z₀ = 50 Ω
Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle
100
190
Power Dissipation
1.6 GHz Power Output
90
170
80
150
70
130
Max .Transient Junction Temp.
60
110
50
90
Pulse Width (µs), Duty Cycle (%)
Pulse Width,
Duty Cycle
100 µs, 100 µs, 300 µs, 300 µs, 500 µs, 500 µs, 1000 µs, 1000 µs, 8000 µs,
10%
20%
10%
20%
10%
20%
10%
20%
9.2%
Power Dissipation (W) 55
55.4
54
55.9
54.3
56.2
53.5
57
58.2
1.6 GHz P_OUT (W)
74.5
71.6
74
71.1
73.2
70.8
73.5
70
68.8
Max. Transient
Junction Temp. (°C)
116.3
143.4
131.0
158.2
137.6
164.0
146.0
173.4
169.4
Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy.
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