XP1031-QK Datasheet, PDF (7/8 Pages) Mimix Broadband – 37.0-42.0 GHz GaAs Power Amplifier QFN, 7x7mm

XP1031-QK
Power Amplifier
37.0-40.0 GHz
Rev. V1
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.0V and Id=600mA. It is also recom-
mended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives
the most reproducible results. Depending on the supply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series
with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected
with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure nega-
tive gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pin (Vd and Vg) needs to have DC bypass capacitance (10 nF/1
uF) as close to the package as possible.
Typical Application
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