XR1011-QH_15 Datasheet, PDF (6/7 Pages) M/A-COM Technology Solutions, Inc. – GHz GaAs ReceiverQFN

4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
December 2009 - Rev 14-Dec-09
R1011-QH
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 4.0V with 25, 45, 60mA respectively.
Additionally, a fixed voltage bias of -2V is required for mixer bias. It is recommended to use active bias to keep the currents constant in order to
maintain the best performance over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit
may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.
The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V.
Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as
possible, with additional 10µF decoupling caps.
Recommended Board Layout
Recommended Decoupling Capacitors: 100pF 0402,
10µF 0805
Recommend to externally ground all N/C pins
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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