MAGX-000912-125L00_15 Datasheet, PDF (6/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Outline Drawing
Production V1
18 Aug 11
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
1. Set V_GS to the pinch-off (V_P), typically -5V
2. Turn on V_DS to nominal voltage (50V)
3. Increase V_GS until the I_DS current is reached
4. Apply RF power to desired level
TURNING THE DEVICE OFF
1. Turn the RF power off
2. Decrease V_GS down to V_P
3. Decrease V_DS down to 0V
4. Turn off V_GS
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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