XB1007-QT Datasheet, PDF (5/6 Pages) Mimix Broadband – 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN

4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=100 mA. It is also recommended to use active biasing to control the drain currents because this gives the most
reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is
-0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XB1007-QT-0G00: MTTF hours vs. Package Base Temperature
1.0E+15
1.0E+14
1.0E+13
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
20 30 40 50 60 70 80 90 100 110 120
Package Base Temp (ºC)
XB1007-QT-0G00: Tch (max) vs. Package Base Temperature
220
200
180
160
140
120
100
Vdd = 4 V, Idd = 100 mA
80
Vdd = 4 V, Idd = 130 mA
60
20
30
40
50
60
70
80
90
100 110 120
Package Base Temp (ºC)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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