MAGX-001220-100L00 Datasheet, PDF (4/6 Pages) M/A-COM Technology Solutions, Inc. – GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz

MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
RF Power Transfer Curve
160
140
120
100
80
1.2GHz
60
1.6GHz
40
2.0GHz
20
0
0
1
2
3
4
5
6
Pin(W)
RF Power Transfer Curve
Power Gain vs. Output Power
18
17
16
15
14
13
12
11
10
0
1.2GHz
1.6GHz
2.0GHz
20 40 60 80 100 120 140 160
Pout(W)
Return Loss vs. Frequency
0
-2
-4
-6
-8
-10
-12
-14
-16
1
1.2 1.4 1.6 1.8
Fr e q(GHz )
3W
4W
5W
2
2.2
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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