XP1031-QK-AN0T Datasheet, PDF (3/5 Pages) M/A-COM Technology Solutions, Inc. – Linear Power Amplifier

XP1031-QK-AN0T
Power Amplifier
37.0 - 39.5 GHz
Rev. V1
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.5 V and Id=600 mA. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pin (Vd and Vg) needs to have DC bypass capacitance
(10 nF/1 µF) as close to the package as possible.
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