NPT25015 Datasheet, PDF (3/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 23W RF Power Transistor

NPT25015
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=200mA, T_A=25°C unless otherwise noted
Table 1: Optimum Impedance Characteristics for Linear OFDM Tuning, single carrier OFDM waveform 64-QAM 3/4, 8
burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF
Frequency (MHz)
2500
2600
2700
Z_S (W)
5.2 - j 1.6
4.6 - j 1.9
4.0 - j 2.2
Z_L (W)
3.3 + j 1.7
3.1 + j 2.7
2.9 + j 4.3
P_OUT (W)
1.5
1.5
1.5
Gain (dB)
14.5
14.5
14.4
Drain
Efficiency (%)
25
25
24
Table 2: Optimum Impedance Characteristics for CW P_SAT, Efficiency, and Gain
Frequency (MHz)
2500
Z_S (W)
3.7 - j 4.7
Z_L (W)
6.9 - j 1.2
P_SAT (W)
23
G_SS (dB)
14.5
Drain
Efficiency (%)
60
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, V_DS = 28V, I_DQ = 200mA
NPT25015
Page 3
NDS-004 Rev 4, April 2013