MSD7XX Datasheet, PDF (3/4 Pages) M/A-COM Technology Solutions, Inc. – Step Recovery Diode

MSD7xx Series
Step Recovery Diode
Rev. V1
Electrical Specifications @ T_A = 25°C:
Voltage Breakdown (V_B) = 15 V min. @ 10 µA
Lifetime (T_L) = 8 ns min. and Transition Time (T_T) = 60 ps max. @ I_F 6 mA / I_R 10 mA
Model
MSD730
MSD731
MSD732
MSD733
MSD734
MSD735
MSD736
Junction Capacitance (C_J)
@ 6 V, 1 MHz
Minimum
pF
0.2 - 0.4
0.4 - 0.6
0.6 - 0.8
0.8 - 1.0
1.0 - 1.4
1.4 - 2.0
2.0 - 3.0
Series Resistance (R_S)
@ 25 mA
Maximum
Ω
0.80
0.60
0.50
0.40
0.30
0.25
0.20
Thermal Resistance (θ_JC)
Pulsed
Maximum
°C/W
50
50
50
50
50
40
40
Absolute Maximum Ratings
Parameter
Junction Temperature
Absolute Maximum
+150°C
Operating Temperature
-55°C to +150°C
Storage Temperature
-65°C to +200°C
Environmental Capabilities
The MSD7xx Series of step recovery diodes are
capable of meeting the environmental requirements
of MIL-STD-750 and MIL-STD-883.
ESD & Moisture Sensitivity Level Rating
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD prevention proce-
dures should be followed. The ESD rating for this
device is Class 0 (HBM).
Assembly Instructions
Die attach of the MSD7xx SRD chip diodes may be
accomplished with eutectic solders, such as
80 Au / 20 Sn, or conductive epoxy. The leads of the
beam lead device may be attached to a hybrid circuit
using thermo compression bonding or conductive
epoxy.
3
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