MAGX-011087_15 Datasheet, PDF (3/9 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Power Amplifier

MAGX-011087
GaN Wideband Power Amplifier, 28 V, 15 W
20 - 1000 MHz
Absolute Maximum Ratings^3,4,5
Parameter
Drain Source Voltage, V_DS
Gate Source Voltage, V_GS
Gate Current, I_G
Power Dissipation, P_T
Junction Case Temperature
Operating Temperature
Storage Temperature
Absolute Max.
100 V
-10 to 3 V
12 mA
38 W
+180°C
-40°C to +100°C
-65°C to +150°C
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with T_J ≤ 180°C will ensure MTTF > 1 x 10⁶ hours.
Preliminary - Rev. V1P
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 1B devices.
3
ADVANCE: Data Sheets contain information regarding a product MACOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to
make changes to the product(s) or information contained herein without notice.
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