MAGX-000035-01000P_15 Datasheet, PDF (3/10 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package

MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Absolute Maximum Ratings ^6,7,8,9,10
Parameter
Absolute Max.
Input Power
Drain Supply Voltage, V_DD
Gate Supply Voltage, V_GG
Supply Current, I_DD
Power Dissipation, CW @ 85ºC
Power Dissipation (P_AVG), Pulsed @ 85°C
Junction Temperature¹¹
Operating Temperature
Storage Temperature
P_OUT - G_P + 2.5 dBm
+65 V
-8 V to 0 V
500 mA
12 W
12 W
200°C
-40°C to +95°C
-65°C to +150°C
ESD Maximum - Human Body Model (HBM)
400 V
ESD Maximum - Charged Device Model (CDM)
150 V
6. Exceeding any one or combination of these limits may cause permanent damage to this device.
7. MACOM does not recommend sustained operation near these survivability limits.
8. For saturated performance it is recommended that the sum of (3 * V_DD + abs (V_GG)) < 175 V.
9. CW operation at V_DD voltages above 50 V is not recommended.
10. Operating at nominal conditions with T_J ≤ 200°C will ensure MTTF > 1 x 10⁶ hours. Junction temperature
directly affects device MTTF and should be kept as low as possible to maximize lifetime.
11. Junction Temperature (T_J) = T_C + Ó¨_JC * ((V * I) - (P_OUT - P_IN))
Typical CW thermal resistance (Ө_JC) = 5.8°C/W
a) For T_C = 83°C,
T_J = 124°C @ 50 V, 330 mA, P_OUT = 10W, P_IN = 0.6W
Typical transient thermal resistances:
b) 300 µs pulse, 10% duty cycle, Ө_JC = 1.94°C/W
For T_C = 83°C,
T_J = 97°C @ 50 V, 325mA, P_OUT = 9.8W, P_IN = 0.6 W
c) 1 ms pulse, 10% duty cycle, Ө_JC = 2.01°C/W
For T_C = 83°C,
T_J = 98°C @ 50 V, 325mA, P_OUT = 9.8W, P_IN = 0.6W
d) 1 ms pulse, 20% duty cycle, Ө_JC = 2.56°C/W
For T_C = 83°C,
T_J = 101°C @ 50 V, 325 mA, P_OUT = 9.8 W, P_IN = 0.6 W
Rev. V2
3
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