MA4E2054_15 Datasheet, PDF (3/10 Pages) M/A-COM Technology Solutions, Inc. – Surface Mount Low Barrier Schottky Diode

MA4E2054 Series
Surface Mount Low Barrier Schottky Diode
Maximum Ratings
Parameter
Unit
Operating Temperature
°C
Storage Temperature
°C
Incident RF Power (CW)
mW
Reverse Voltage @ 25 °C
V
Forward Current
mA
Soldering Temperature (Standard Part #)
°C
Soldering Temperature (Lead Free Part #)
°C
* At 125 °C case temperature. Derate linearly to zero watts at 125 °C case temperature.
Rev. V9
Maximum Ratings
-65 to +125
-65 to +125
75*
3
20
+235 for 5 sec.
+260 for 5 sec.
Electrical Specifications @ +25 °C
Parameter
Breakdown Voltage
Reverse Leakage Current
Reverse Leakage Current
Total Capacitance
Condition
I_R = 10 A
V_R = 1 V
V_R = 3 V
V_R = 0 V
f = 1 MHz
Symbol
V_B
I_R
I_R
C_T
Specification
3.0 V min.
100 nA max.
500 nA max.
0.30 pF max.
Dynamic Resistance²
Forward Voltage
I_F = 10 mA
R_D
I_F = 1 mA
V_F
Forward Voltage Difference¹
I_F = 1 mA
V_F
1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
2. RD = RS + RJ where RJ =
26
IF (in mA)
17 Ohms max.
250 mV min.
350 mV min.
20 mV max.
Typical RF Performance @ +25 °C in Chip Form, Mounted on a Microstrip Fixture
Parameter
Mixer Noise Figure¹
IF Impedance
Tangential Signal
Sensitivity²
Detector Output, Voltage at -30 dBm²
Detector Output, Voltage at -30 dBm²
Conditions
f = 9.375 GHz
LO = 0 dBm
I_F = 30 MHz
I_F = 20 mA
BW = 2 MHz
Video NF = 1.5 dB
R_L = 100K Ohms
I_F = 20 A
R_L = 1M Ohm
Typical Value
5.7 dB (SSB)
200 ohms
-55 dBm
20 mV
20 mV
1. Fixture tuned to 9.375 GHz.
2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.
3
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