MA4E1338 Datasheet, PDF (3/7 Pages) Tyco Electronics – Silicon Medium Barrier Schottky Diodes

MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
M/A-COM Products
Rev. V8
Maximum Ratings @ 25 °C (unless otherwise specified) ^1,2
Parameter
Unit
Values
Operating Temperature
°C
-55 to +125
Storage Temperature
Total Power Dissipation
(RF and D.C.)
Continuous Forward Current
°C
-55 to +125
mW
250
mA
30
Surge Forward Current, @ t < 10 ms
mA
100
Reverse Voltage
V
8
Soldering Temperature (Standard Part #)
°C
+235 for 5 sec.
Soldering Temperature (RoHS Compliant Part #)
°C
+260 for 5 sec.
Electrostatic Discharge ( ESD ) Classification
-
1A
1. Operation of this device above any one of the Maximum Rated parameters may cause permanent damage.
2. Please refer to Application Note M538 for surface mounting instructions.
3. ESD rating based on Human Body Model.
Electrical Specifications @ +25 °C
Parameter
Forward Voltage
Condition
I_F = 1 mA
Delta Forward Voltage
I_F = 1 mA
Forward Voltage
Total Capacitance
Reverse Leakage Current
Reverse Voltage Breakdown
I_F = 10 mA
V_R = 0 V
F = 1 MHz
V_R = 1 V
I_R = 10 µA
Symbol
V_F
Δ V_F
V_F
C_T
I_R
Vb
Specification
360 mV max.
20 mV max.
(for series pair and unconnected pair
configurations)
500 mV max.
1.0 pF max.
100 nA max.
8 V min.
3
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
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