XP1080-QU Datasheet, PDF (2/7 Pages) Mimix Broadband – 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm

XP1080-QU
Power Amplifier
37.0 - 40.0 GHz
Electrical Specifications: 37-40.15 GHz (Ambient Temperature T = 25°C)
Parameter
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Units
dB
dB
dB
Min.
10.0
4.0
21.0
Typ.
14.0
8.0
25.0
Gain Flatness (S21)
dB
-
+/-1.0
Reverse isolation (S12)
dB
-
50
Output Power for 1dB Compression Point (P1dB)
Output IMD3 with Pout (scl) = 14 dBm
Output IP3
dBm
-
27.0
dBc
43.0
48.0
dBm
35.5
+38.0
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id1) (Vd=4.0V, Vg=-0.3V)
VDC
-
VDC
-1.0
mA
-
4.0
-0.3
1000
Absolute Maximum Ratings ^2,3
Parameter
Absolute Max.
Supply Voltage (Vd)
+4.3 V
Gate Bias Voltage (Vg)
1.5 V < Vg < 0 V
Input Power (Pin)
15 dBm
Abs. Max Junction/Channel Temp
Max. Operating Junction/Channel
Temp
Continuous Power Dissipation (Pdiss)
at 85 °C
MTTF Graph 1
175°C
7.0 W
Thermal Resistance (Tchannel=150°C)
12°C/W
Operating Temperature (Ta)
-40°C to +85°C
Storage Temperature (Tstg)
Mounting Temperature
ESD Min. - Machine Model (MM)
-65°C to +150°C
See solder reflow
profile
Class A
ESD Min. - Human Body Model (HBM) Class 1A
MSL Level
MSL3
2. Channel temperature directly affects a device's MTTF.
Channel temperature should be kept as low as possible to
maximize lifetime.
3. For saturated performance it recommended that the sum of
(2*Vdd + abs (Vgg)) <9V
Recommended Layout
Rev. V2
Max.
-
-
30.0
-
-
-
-
-
4.0
-0.1
1200
2
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