XP1039-QJ_15 Datasheet, PDF (2/8 Pages) M/A-COM Technology Solutions, Inc. – Integrated Power Detector

XP1039-QJ
2.5 W Power Amplifier
5.6 - 7.1 GHz
Rev. V1
Electrical Specifications: Freq: 5.9 - 7.1 GHz, V_DD = 7 V, I_DQ5 = 1350 mA, T_A = +25C
Parameter
Units
Min.
Typ.
Max.
Small Signal Gain
dB
15
17
20
Input Return Loss
dB
—
10
—
Output Return Loss
dB
—
8
—
P1dB
Psat⁶
dBm
—
33
—
dBm
—
34
—
Output IP3, +22 dBm SCL
dBm
43.5
48
—
Delta V_DET (V_DET - V_REF) @ 4 dBm P_IN, 7.1 GHz
Detector Bias Voltage
V
—
-1.53
—
VDC
—
5.0
—
Gate Bias Voltage (V_GG1,2)
VDC
—
-0.9
—
5. Adjust V_GG1 and V_GG2 between –1.4 and –0.4 V to achieve specified I_DQ. V_GG1 and V_GG2 should be the same voltage.
6. For reference only. Large signal operation is only recommended under pulsed conditions. Keep output power below P1dB for C.W.
operation.
Maximum Operating Ratings^7,8,9
Parameter
Input Power
Drain Supply Voltage
Junction Temperature¹⁰
Operating Temperature
Storage Temperature
Absolute Maximum
+24 dBm
+8 Volts
+160°C
-40°C to +85°C
-65°C to +150°C
7. Exceeding any one or combination of these limits may
cause permanent damage to this device.
8. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
9. Operating at nominal conditions with T_J ≤ 160°C will ensure
MTTF > 1 x 10⁶ hours.
10. Junction Temperature (T_J) = T_C + Ó¨_JC * ((V * I) - (P_OUT - P_IN))
Typical thermal resistance (Ө_JC) = 6.8°C/W
a) For T_C = 25°C,
T_J = 88°C @ 7 V, 1350 mA, P_OUT = 23 dBm, P_IN = 6 dBm
b) For T_C = 85°C,
T_J =148°C @ 7 V, 1350 mA, P_OUT = 21.5 dBm, P_IN = 6 dBm
Absolute Maximum Ratings^11,12
Parameter
Supply Gate Voltage
Supply Current (I_D1)
Supply Current (I_D2)
Detector Pin
Detector Ref Pin
Absolute Max.
-2.5 V
600 mA
1200 mA
6V
6V
Continuous Power
Dissipation @ 85ºC
11.2 W
Junction Temperature
175ºC
11. Channel temperature directly affects a device’s MTTF.
Channel temperature should be kept as low as possible to
maximize lifetime.
12. For saturated performance it recommended that the sum of
(2*V_DD + abs(V_GG)) <17
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1A devices.
2
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