XD1008-BD_15 Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – Unconditional Stability over Temperature Range

XD1008-BD
Receiver
30 kHz-40 GHz
Electrical Specifications: High Power Applications²
Vdd=7 V, Idd(Q)=200 mA, Zin=Zo=50
Parameter and Test Conditions
Units
Small Signal Gain (S21)
Gain Flatness (S21)
Input Return Loss RF (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) @ 22 GHz
Saturated RF Power (Psat) @ 22 GHz
Output 3rd Order Intercept Point (OIP3) @ 22 GHz
Noise Figure (NF) @ 26 GHz
Noise Figure (NF) @ 40 GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
Min.
Electrical Specifications²
Vdd=6 V, Idd(Q)=187 mA, Zin=Zo=50
Parameter and Test Conditions
Small Signal Gain (S21)
Gain Flatness (S21)
Input Return Loss RF (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
Output Power with 7 dB Input Power (Pout)
Output Power for 1 dB Compression (P1dB) @ 22 GHz
Saturated RF Power (Psat) @ 22 GHz
Output 3rd Order Intercept Point (OIP3) @ 22 GHz
Noise Figure (NF) @ 26 GHz
Noise Figure (NF) @ 40 GHz
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
Min.
14.0³
20³
(2) Data measured in wafer form with backside temperature T = 25°C unless otherwise noted.
(3) 100% on-wafer RF test at 5, 25 and 40 GHz
Typ.
15
+/-0.75
16
16
28
22
24.5
27
4.5
6.5
Typ.
15.5
+/-0.75
16
16
28
22
22.5
24.5
27
4.5
6.5
Rev. V1
Max.
Max.
2
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