UF28100M_15 Datasheet, PDF (2/3 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF28100M
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
M/A-COM Products
Released - 08.07
Typical Broadband Performance Curves
EFFICIENCY _VS FREQUENCY
P_IN=10W I_DD =600 mA (Push pull device)
80
POWER OUTPUT _VS SUPPLY VOLTAGE
P_IN=10 W I_DQ=600 mA F=500 MHz
120
100
70
80
60
60
40
50
20
40
100
200
300
400
500
FREQUENCY (MHz)
0
14
16
20
24
28
32
SUPPLY VOLTAGE (V)
POWER OUTPUT _VS POWER INPUT
V_DD =28 V I_DQ =600 mA (Push pull device)
120
100
200MHz
400MHz
500MHz
80
60
300MHz
40
20
0
0
1
2
4
6
8
POWER INPUT (W)
10 12
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] / Fax: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.