NPTB00025_15 Datasheet, PDF (2/6 Pages) M/A-COM Technology Solutions, Inc. – 25W RF Power Transistor

NPTB00025
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 8mA)
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D
Gate Threshold Voltage
(V_DS = 28V, I_D = 8mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 225mA)
On Resistance
(V_GS = 2.0V, I_D = 60mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS = 2.0V)
Min
Typ
Max
Units
100
-
-
1
-
V
5
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.44
0.55
W
4.9
5.4
-
A
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=225mA, T_A=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz)
800
2000
3000
Z_S (W)
3.9 + j5.9
3.7 - j5.1
4.7 - j15.3
Z_L (W)
12.2 + j6.1
7.7 - j1.1
7.4 - j5.8
Z_S is the source impedance
presented to the device.
Z_L is the load impedance
presented to the device.
NPTB00025
Figure 1 - Optimal Impedances for CW Performance, V_DS = 28V, I_DQ = 225mA
Page 2
NDS-006 Rev. 4, April 2013