NPT2010 Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT

NPT2010
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
I_DLK
Drain-Source Leakage Current
(V_GS=-8V, V_DS=160V)
I_GLK
Gate-Source Leakage Current
(V_GS=-8V, V_DS=0V)
On Characteristics
V_T
V_GSQ
R_ON
I_{D, MAX}
Gate Threshold Voltage
(V_DS=48V, I_D=24mA)
Gate Quiescent Voltage
(V_DS=48V, I_D=600mA)
On Resistance
(V_DS=2V, I_D=180mA)
Maximum Drain Current
(V_DS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
Min
Typ
Max
Units
-
-
24
mA
-
-
12
mA
-2.5
-1.5
-0.5
V
-2.1
-1.2
-0.3
V
-
0.2
-

-
14
-
A
Thermal Resistance Specification:
Symbol Parameter
Typ
Units
R_JC
Thermal Resistance (Junction-to-Case),
T_J = 200 °C
1.75
°C/W
Junction Temperature (T_J) measured using IR Microscopy, Case Temperature (T_C) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
T_STG
T_J
HBM
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Max
Units
160
V
-10 to 3
V
48
mA
114
W
-65 to 150
°C
225
°C
Class 1A
Page 2
NDS-034 Rev. 1, 052413