MAPRST0002 Datasheet, PDF (2/3 Pages) M/A-COM Technology Solutions, Inc. – Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty

MAPRST0002
Radar Pulsed Power Transistor
50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
M/A-COM Products
Released, 30 May 07
Typical RF Performance
Freq. Pin Pout Gain ΔGain Ic
(GHz) (W) (W) (dB) (dB) (A)
Eff
RL VSWR-S VSWR-T ^{P1dB Overdrive}
(%) (dB) (1.5:1) (3:1)
Pout Δ Po
1.2 5.6 62.0 10.44 -
2.61 59.4 -14.7
S
P
68.6 0.44
1.3 5.6 57.6 10.11 -
2.60 55.3 -20.6
S
1.4 5.6 57.1 10.07 0.36 2.31 61.9 -13.9
S
P
70.5 0.88
P
62.2 0.37
Note: ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 5.6W.
Gain vs. Frequency
11.0
10.5
10.0
9.5
9.0
1.20
1.25
1.30
1.35
1.40
Fre q (GHz)
Collector Efficiency vs. Frequency
65
60
55
50
45
1.20
1.25
1.30
1.35
1.40
Fre q (GHz)
RF Test Fixture Impedance
F (GHz)
1.2
1.3
1.4
Z_IF (Ω)
3.7 - j4.6
3.5 - j4.5
3.1 - j4.5
Z_OF (Ω)
4.4 + j0.8
3.7 - j1.0
2.2 - j1.1
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] / Fax: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
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Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.