MAGX-001214-500L00_15 Datasheet, PDF (2/8 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V2
Typical RF Performance under standard operating conditions, P_OUT = 500 W (Peak)
Freq.
P_IN
Gain
I_D
(MHz)
(W)
(dB)
(A)
Eff.
RL
Droop
+1dB OD
(%)
(dB)
(dB)
(W)
1200
5.15
19.86
17.7
56.2
-12.7
0.29
568
1250
5.35
19.69
16.7
59.5
-10.3
0.30
561
1300
5.69
19.43
17.2
57.9
-10.9
0.33
554
1350
5.86
19.31
17.9
55.7
-15.3
0.36
547
1400
5.85
19.22
18.1
54.8
-17.5
0.38
549
Electrical Specifications: Freq. = 1200 - 1400 MHz, I_DQ = 400 mA, T_A = 25°C
Parameter
Test Conditions
Symbol Min.
RF Functional Tests: V_DD = 50 V; 300 µs / 10%
Input Power
Power Gain
P_OUT= 500 W Peak (50 W avg.)
P_IN
-
P_OUT= 500 W Peak (50 W avg.)
G_P
17.5
Drain Efficiency
Pulse Droop
Load Mismatch Stability
P_OUT= 500 W Peak (50 W avg.)
η_D
50
P_OUT= 500 W Peak (50 W avg.) Droop
-
P_OUT= 500 W Peak (50 W avg.) VSWR-S
-
Load Mismatch Tolerance
P_OUT= 500 W Peak (50 W avg.) VSWR-T
-
Extended Pulse Width Conditions: V_DD = 42 V; 1.0 ms / 10%; (typical RF data)
Input Power
Power Gain
P_OUT= 375 W Peak (37.5 W avg.)
P_IN
-
P_OUT= 375 W Peak (37.5 W avg.)
G_P
-
Drain Efficiency
P_OUT= 375 W Peak (37.5 W avg.)
η_D
-
Typ.
6
19.2
56
0.4
3:1
5:1
5.3
18.5
55
Max.
8.9
-
-
0.7
-
-
-
-
-
Units
Wpk
dB
%
dB
-
-
Wpk
dB
%
Electrical Characteristics: T_A = 25°C
Parameter
DC Characteristics:
Test Conditions
Symbol
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V_GS = -8 V, V_DS = 175 V
V_DS = 5 V, I_D = 75 mA
V_DS = 5 V, I_D = 17.5 mA
I_DS
V_{GS (TH)}
G_M
Dynamic Characteristics:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input matched
V_DS = 50 V, V_GS = -8 V, F = 1 MHz
V_DS = 50 V, V_GS = -8 V, F = 1 MHz
C_ISS
C_OSS
C_RSS
Min.
-
-5
12.5
N/A
-
-
Typ.
1.0
-3.1
19.2
N/A
55
5.5
Max. Units
30
mA
-2
V
-
S
N/A
pF
-
pF
-
pF
2
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