MAGX-000245-014000_15 Datasheet, PDF (2/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Power Transistor

MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Rev. V2
Electrical Specifications¹: Freq. = 2450 MHz, T_A = 25°C
Parameter
Test Conditions
RF Functional Tests: V_DD = +50 V, I_DQ = 15 mA, CW Operation
Input Power
P_OUT= 14 W
Power Gain
Drain Efficiency
2^nd Harmonics
3^rd Harmonics
P_OUT= 14 W
P_OUT= 14 W
P_OUT= 14 W
P_OUT= 14 W
Load Mismatch Stability
P_OUT= 14 W
Load Mismatch Tolerance
P_OUT= 14 W
Symbol Min.
P_IN
G_P
η_D
2Fc
3Fc
VSWR-S
VSWR-T
-
13.8
55
-
-
-
-
Typ.
0.43
15.2
57
-50
-49
5:1
10:1
Max. Units
0.58
W
-
dB
-
%
-
dBc
-
dBc
-
-
-
-
Electrical Characteristics: T_A = 25°C
Parameter
Test Conditions
DC Characteristics
Drain-Source Leakage Current
V_GS = -8 V, V_DS = 175 V
Gate Threshold Voltage
V_DS = 5 V, I_D = 2 mA
Forward Transconductance
Dynamic Characteristics
V_DS = 5 V, I_D = 500 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0 V, V_GS = -8 V, F = 1 MHz
V_DS = 50 V, V_GS = -8 V, F = 1 MHz
V_DS = 50 V, V_GS = -8 V, F = 1 MHz
Symbol Min.
I_DS
V_{GS (TH)}
G_M
-
-5
0.35
C_ISS
-
C_OSS
-
C_RSS
-
Typ.
-
-3
-
4.4
1.9
0.2
Max. Units
750
µA
-2
V
-
S
-
pF
-
pF
-
pF
Correct Device Sequencing
Turning the device ON
1. Set V_GS to the pinch-off (V_P), typically -5 V.
2. Turn on V_DS to nominal voltage (+50V).
3. Increase V_GS until the I_DS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V_GS down to V_P.
3. Decrease V_DS down to 0 V.
4. Turn off V_GS.
1. Electrical Specifications measured in MACOM RF evaluation board.
2
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