MAGX-000040-00500P Datasheet, PDF (2/9 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC D-Mode Transistor Technology

MAGX-000040-00500P
GaN Wideband 5 W Pulsed Transistor in Plastic Package
DC - 4.0 GHz
Rev. V1
Typical Narrowband RF Performance²: V_DD = 50 V, I_DQ = 17 mA, T_A = 25°C
Parameter
1 GHz
1.6 GHz
3.0 GHz
3.5 GHz
Units
Linear Gain
18
17
14
13.5
dB
Pulsed Peak Output Power (P3dB)
5.3
5.3
5.3
5.3
W
Pulsed Power Gain (P3dB)
15
14
11
10.5
dB
Drain Efficiency (P3dB)
61
55
53
50
%
2. Device optimally matched in narrowband load-pull test system.
Electrical Specifications³: Freq. = 1.6 GHz, V_DD = 50 V, I_DQ = 17 mA, T_A = 25°C, Z₀ = 50 Ω
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
RF FUNCTIONAL TESTS: Pulse Width = 1 ms, 10% Duty Cycle
Pulsed Peak Output Power
P_IN = 0.28 W Peak
P_OUT
4.5
5.3
-
Wpk
Pulsed Power Gain
Pulsed Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
RF FUNCTIONAL TESTS: CW
P_IN = 0.28 W Peak
P_IN = 0.28 W Peak
P_IN = 0.28 W Peak
P_IN = 0.28 W Peak
G_P
12
13
-
dB
η_D
47
51.3
-
%
VSWR-S -
5:1
-
-
VSWR-T -
10:1
-
-
CW Output Power
P3dB
P_OUT
-
4
-
W
3. Device measured in MACOM 1.4-1.6 GHz evaluation board. See tuning information on page 4.
Electrical Characteristics: T_A = 25°C
Parameter
Test Conditions
DC CHARACTERISTICS
Drain-Source Leakage Current
V_GS = -8 V, V_DS = 175 V
Symbol Min. Typ. Max. Units
I_DS
-
-
200
μA
Gate Threshold Voltage
V_DS = 5 V, I_D = 0.6 mA
V_{GS (TH)}
-5
-3
-2
V
Forward Transconductance
DYNAMIC CHARACTERISTICS
V_DS = 5 V, I_D = 1500 mA
G_M
0.1
-
-
S
Input Capacitance
V_DS = 0 V, V_GS = -8 V, F = 1 MHz
C_ISS
-
0.5
-
pF
Output Capacitance
V_DS = 50 V, V_GS = -8 V, F = 1 MHz C_OSS
-
0.18
-
pF
Reverse Transfer Capacitance V_DS = 50 V, V_GS = -8 V, F = 1 MHz C_RSS
-
0.05
-
pF
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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