MADS-011010-1419 Datasheet, PDF (2/3 Pages) M/A-COM Technology Solutions, Inc. – Schottky Zero Bias Detector Diode Chip

MADS-011010-1419
Schottky Zero Bias Detector Diode Chip
Electrical Specifications @ T_A = +25 °C
Parameter
Breakdown Voltage
Forward Voltage
Forward Voltage
Total Capacitance
Condition
I_R = 100µA
I_F = .1 mA
I_F = 1 mA
V_R = .5 V
f = 1 MHz
Symbol
V_B
V_F
V_F
C_T
V1
Specification
1.5 V min.
60 - 120mV max.
150 - 220mV max.
0.15 pF Typical.
Dynamic Resistance
I_F = 9.5 -10.5mA
Chip Dimensions (ODS - 1419)
R_D
40 Ohms max.
Dimension
Mils
mm
A
10.5 +/- 1.0
0.266 +/- 0.025
B
7 +/- 1.0
0.177 +/- 0.025
C
2.6 X 5.7
.066 X .144
1. Topside metal (cathode contact) thickness :
10 microns Au ( typical )
2. Backside metal (anode contact) thickness:
.1 micron Au ( typical )
2 ^{* Specifications are subject to change without prior notification}
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is considering for development. Performance is based on target specifications, simulated results,
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and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. ^{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes}
Commitment to produce in volume is not guaranteed.
to the product(s) or information contained herein without notice.