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MADP-042XX5 Datasheet, PDF (2/5 Pages) M/A-COM Technology Solutions, Inc. – Polymer Scratch Protection
MADP-042XX5-13060 Series
SURMOUNTTM PIN Diodes:
RoHS
Electrical Specifications @ TAMB = +25°C 4,5,6,7
Symbol
Parameter
CT
Capacitance
RS
Resistance
VF
Forward Voltage
Conditions
-10 V, 1 MHz
-10 V, 1 GHz
-40 V, 1 MHz
-40 V, 1 GHz
+20 mA, 1 GHz
+50 mA, 1 GHz
+10 mA
Units
pF
Ω
V
MADP-042305-13060
Min. Typ. Max.
0.14
0.22
—
0.15
—
0.13
0.22
0.14
—
—
1.32
1.18
—
—
0.87
1.00
IR
Reverse Leakage Current
-80 V
µA
—
—
10
F1 = 1000 MHz
IIP3
Input Third Order
Intercept Point
F2 = 1010 MHz
Input Power = +20 dBm
dBm
—
72
—
IBIAS = +20 mA
θ
CW Thermal Resistance
—
°C/W
—
145
—
TL
Lifetime
+10 mA / -6 mA
( 50% - 90% V )
ns
—
180
—
Rev. V8
MADP-042505-13060
Min. Typ. Max.
0.28
0.40
—
0.28
—
0.27
0.40
0.27
—
—
0.83
0.76
—
—
0.84
1.00
—
—
10
—
76
—
—
115
—
—
210
—
Symbol
Parameter
CT
Capacitance
RS
Resistance
VF
Forward Voltage
Conditions
-10 V, 1 MHz
-10 V, 1 GHz
-40 V, 1 MHz
-40 V, 1 GHz
+20 mA, 1 GHz
+50 mA, 1 GHz
+10 mA
Units
pF
Ω
V
MADP-042405-13060
Min. Typ. Max.
0.61
0.75
—
0.61
—
0.57
0.75
0.58
—
—
0.62
0.58
—
—
0.82
1.00
MADP-042905-13060
Min. Typ. Max.
0.18
—
0.06
—
0.18
—
—
3.14
2.60
—
—
0.93
1.00
IR
Reverse Leakage Current
-80 V
µA
—
—
10
—
—
10
F1 = 1000 MHz
IIP3
Input Third Order
Intercept Point
F2 = 1010 MHz
Input Power = +20 dBm
dBm
—
80
—
—
65
—
IBIAS = +20 mA
θ
CW Thermal Resistance
—
°C/W
—
100
—
—
185
—
TL
Lifetime
+10 mA / -6 mA
( 50% - 90% V )
ns
—
255
—
—
140
—
4. Total capacitance (CT) is equivalent to the sum of junction capacitance (CJ) and parasitic capacitance (Cpar).
5. Series resistance (RS) is equivalent to the total diode resistance: RS = RJ (Junction Resistance) + RC ( Ohmic Resistance)
6. RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package.
7. Theta (θ) is measured with the die mounted in an ODS-1134 package.
2
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