MA4VAT907-1061T Datasheet, PDF (2/4 Pages) Tyco Electronics – High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz

MA4VAT907-1061T
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Electrical Specifications @ +25 °C
Parameter
Frequency Band
Unit
Min
Typ
Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Insertion Loss
0.80 GHz—1.00 GHz
dB
Input Return Loss
dB
Output Return Loss
dB
P1dB
dBm
Input IP3
dBm
Control Voltage
V
Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Maximum Attenuation
0.80 GHz—1.00 GHz
dB
Input Return Loss @ Max Attenuation
dB
Output Return Loss @ Max Attenuation
dB
Input IP3
dBm
Control Voltage @ Max Attenuation
V
Current@ Max Attenuation
Bias = 3.0V
mA
-
11
11
30
45
-
18.5
15
15
36
-
2.5
1.0
12
12
-
49
0 V @ OuA
24
21
21
39
3.0 V @ 3.35 mA
Typical RF Performance Over Industry Designated RF Frequency Bands
Band
Freq I. Loss
Att.
R. Loss
IIP3
AMPS
(MHz)
(dB)
(dB)
RX
824-849
0.9
22
TX
869-894
0.9
22
(dB)
(dBm)
12
50
12
50
Rev. V5
Max
1.2
-
-
-
-
-
-
-
-
-
-
4.5
Phase
-Relative-
(Degree)
-15°
GSM
RX
880-915
1.2
20
11
50
-20°
TX
925-960
1.2
20
11
50
3. All are typical values only.
4. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation.
(Please refer to the plots below)
2
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