MA4VAT2004-1061T Datasheet, PDF (2/4 Pages) Tyco Electronics – High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz

MA4VAT2004-1061T
High IIP3 PIN Diode Variable Attenuator
1.7 - 2.0 GHz
Electrical Specifications @ +25 °C
Parameter
No DC Bias Low Loss State
Insertion Loss
Input Return Loss
Output Return Loss
P1dB
IIP3
Control Voltage
DC Bias RF Attenuation State
Maximum Attenuation
Input Return Loss @ Max Attenuation
Output Return Loss @ Max Attenuation
IP3
Control Voltage @ Max Attenuation
Current@Max Attenuation
Frequency Band
1.70 GHz – 2.00 GHz
1.70 GHz – 2.00 GHz
Bias =1.66V
Unit
dB
dB
dB
dBm
dBm
V
dB
dB
dB
dBm
V
mA
Rev. V4
Min
Typ
Max
-
1.4
1.8
13
15
-
13
15
-
30
-
-
47
49
-
-
0V @ 0uA
-
20
24
-
18
21
-
18
21
-
36
39
-
-
1.66V @ 1.50mA
-
1.2
2.4
Typical RF Performance Over Industry Designated RF Frequency Bands ^3,4
Band
Freq
I. Loss
Att.
R. Loss
IIP3
(MHz)
(dB)
(dB)
(dB)
(dBm)
DCS
RX
1710-1785
1.6
22
13
50
TX
1805-1880
1.6
22
13
50
Phase
-Relative-
(Degree)
+15º
PCS
RX
1850-1910
1.6
21
13
50
+10º
TX
1930-1990
1.6
21
13
50
UMTS
RX
1920-1980
1.6
20
13
50
-5º
WCDMA/CDMA
TX
2110-2170
1.8
20
13
50
TD-S-CDMA
-
2010-2025
1.7
20
13
50
-2º
SCDMA
-
1800-2200
1.8
20
13
50
-10º
3. All are typical values only.
4. Relative phase is the measured Insertion Phase Difference between Insertion Loss and the 20dB Attenuation State.
(Please refer to the plots below)
2
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is considering for development. Performance is based on target specifications, simulated results,
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