MA4P290-1225T Datasheet, PDF (2/6 Pages) Tyco Electronics – PIN Diode π Quad Attenuator

MA4P290-1225T
PIN Diode π Quad Attenuator
Electrical Specifications @ 25 °C
Parameter
Reverse Current (I_R)
Condition
Vr = 200 V
Capacitance (C_T)
Resistance (R_S)
Resistance (R_S)
Resistance (R_S)
Minority Carrier Lifetime (T_L)
I Region Width
F = 1 MHz, V = 50 V
F = 100 MHz, I = 1 mA
F = 100 MHz, I = 10 mA
F = 100 MHz, I = 100mA
IF = 10 mA
Unit
μA
pF
Ω
Ω
Ω
μS
μm
Rev. V3
Typical
.20
85
11
3
2.7
175
Max.
10
.30
16
Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wide Band RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Insertion Loss
Return Loss
Attenuation
Input IP3
Input IP3
Input IP3
Input IP3
Settling Time
RF C.W. Incident
Power
Frequency Range
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
Test Conditions
13 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
13 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
0 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
0 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 1010 MHz, F2 = 1020 MHz
+ 10 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 1010 MHz, F2 = 1020 MHz
0 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 110 MHz, F2 = 120 MHz
+ 10 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 110 MHz, F2 = 120 MHz
Within 1 dB of Final Attenuation Value
F = 1 GHz
0 – 20 V Series Diode Bias
and 3.7V Shunt 1 and 2 Bias
Units
dB
dB
dB
dBm
dBm
dBm
dBm
uS
dBm
Min.
Typ.
-2.8
Max.
-15
-36
45
43.5
43.5
39
10
+ 20
2
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