MA4E1339_16 Datasheet, PDF (2/6 Pages) M/A-COM Technology Solutions, Inc. – Silicon Medium Barrier Schottky Diodes

MA4E1339 Series
Silicon Medium Barrier Schottky Diodes
Electrical Specifications @ +25°C
Parameter
Forward Voltage (V_F)
Delta Forward Voltage( V_F)
Condition
I_F = 1 mA
I_F = 10 mA
I_F = 1 mA
Total Capacitance (C_T)
Reverse Leakage Current (I_R)
Reverse Voltage Breakdown (V_B)
V_R = 0 V, F = 1 MHz
V_R = 15 V
I_R = 10 µA
Rev. V11
Specification
410 mV max.
1 V max.
20 mV max.
(for series pair and unconnected pair configurations)
1.2 pF max.
200 nA max.
20 V min.
Maximum Ratings @ 25°C (unless otherwise specified)^1,2
Parameter
Values
Operating Temperature
Storage Temperature
Total Power Dissipation
(RF and DC)
Continuous Forward Current
Surge Forward Current, @ t < 10 ms
Reverse Voltage
Soldering Temperature (Standard Part #)
Soldering Temperature (RoHS Compliant Part #)
Electrostatic Discharge ( ESD ) Classification
-55°C to +125°C
-55 to +125
250 mW
30 mA
100 mA
20 V
+235°C for 5 sec.
+260°C for 5 sec.
1A, HBM
1. Operation of this device above any one of the Maximum Rated parameters may cause permanent damage.
2. Please refer to Application Note M538 for surface mounting instructions.
2
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