MA44781_15 Datasheet, PDF (2/2 Pages) M/A-COM Technology Solutions, Inc. – Dual Pair Anti-Parallel Non-Magnetic PIN Diode

MA44781
Dual Pair Anti-Parallel Non-Magnetic PIN Diode
Rev. V4
Electrical Specifications:
T_A = +25°C, Breakdown Voltage @ I_R = 10 µA, V_b = 60 V Minimum
Parameter
Test Conditions
Units
Min.
Forward Voltage
I_F = 20 µA
V
0.500
Delta Forward Voltage
Junction Capacitance
(per diode)
Total Capacitance
I_F = 20 µA (between each diodes)
mV
f = 1 MHz, V_R = -6.0 V
pF
V_R = 0 V
pF
—
0.15
1.5
Typ.
—
+/- 30
—
—
Max.
0.780
—
0.50
3.5
Absolute Maximum Ratings¹
Parameter
Reverse Voltage
Forward Current
(Per Diode Pair)²
Total Power Dissipation³
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
60 V
2A
2W
-55°C to +125°C
-55°C to +125°C
+175°C
1. Operation of this device above any one of these parameters
may cause permanent damage.
2. Total current per diode= I (rms) + I (dc) @ +25°C
3. Please refer to application note M538 for surface mounting
instructions.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
2
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