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2N5152 Datasheet, PDF (2/4 Pages) Seme LAB – HIGH SPEED MEDIUM VOLTAGE SWITCHES
2N5152, 2N5152L, 2N5154, 2N5154L
NPN Power Silicon Transistor
Electrical Characteristics
Parameter
Test Conditions
Switching Characteristics
Turn-On Time
IC = 5.0 Adc; IB1 = 500 mAdc
Turn-Off Time
Storage Time
Fall Time
Safe Operating Area
RL = 6 Ω
IB2 = -500 mAdc
VBE(OFF) = 3.7 Vdc
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25°C, I Cycle, t = 1.0 s
VCE = 5.0 Vdc, IC = 2.0 Adc
VCE = 32 Vdc, IC = 310 mAdc
VCE = 80 Vdc, IC = 12.5 mAdc
Rev. V1
Symbol Units Min.
Max.
TON
µs
—
0.5
TOFF
µs
—
1.5
TS
µs
—
1.4
Tf
µs
—
0.5
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C
@ TC = 25°C
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TOP, TSTG
Value
80 Vdc
100 Vdc
5.5 Vdc
2 Adc
1.0 W
100 W
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
RθJC
Max. Value
10°C/W
2
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DC-0012382