MRF275L Datasheet, PDF (17/17 Pages) Tyco Electronics – N-CHANNEL BROADBAND RF POWER FET

MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
optimum performance. The value of quiescent drain current
(IDQ) is not critical for many applications. The MRF275L was
characterized at IDQ = 100 mA, each side, which is the sug-
gested minimum value of IDQ. For special applications such
as linear amplification, IDQ may have to be selected to opti-
mize the critical parameters. The gate is a dc open circuit
and draws no current. Therefore, the gate bias circuit may
be just a simple resistive divider network. Some applications
M/A-COM Products
Released - Rev. 07.07
may require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF275L may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.