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XX1010-QT_15 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Integrated Gain, Doubler and Driver Stages
XX1010-QT
Doubler
14.625-15.0/29.25-30 GHz
Features
 Integrated Gain, Doubler and Driver Stages
 +4.5 V Single Positive Bias
 Integrated Bypassing Capacitor
 +20 dBm Output Saturated Power
 30 dBc Fundamental Suppression
 On-Chip ESD Protection
 100% RF, DC and Output Power Testing
 Lead-Free 3 mm 16-Lead QFN Package
 RoHS* Compliant and 260°C Reflow Compatible
Description
The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz
GaAs MMIC doubler that integrates a gain stage,
passive doubler and driver amplifier onto a single
device. This device has a self-biased architecture
requiring a single positive supply (+4.5V) only and
integrated on-chip bypassing and DC blocking
capacitors eliminating the need for any external
components.
This device uses InGaAs pHEMT device technology,
and is based upon electron beam lithography to
ensure high repeatability and uniformity.
The XX1010-QT has integrated ESD structures for
protection and comes in a low cost 3 mm QFN
package.
The device is well suited for millimeter wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Ordering Information
Part Number
Package
XX1010-QT-0G00
Bulk Quantity
XX1010-QT-0G0T
1000 Piece Reel
XX1010-QT-EV1
Evaluation Board
Functional Block Diagram
N/C N/C N/C Vd
16 15 14 13
Rev. V3
N/C 1
12 N/C
GND 2
RFIN 3
N/C 4
11 GND
X2
10 RFOUT
9 N/C
567 8
N/C N/C N/C N/C
Pin Configuration1
Pin No.
Function
1,4,5,6,7,8
2,11
3
9,12,14,15,16
10
13
No Connection
Ground
RF Input
No Connection
RF Output
Vd
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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