XU1009-BD_15 Datasheet, PDF (1/9 Pages) M/A-COM Technology Solutions, Inc. – Transmitter

18.0-36.0 GHz GaAs MMIC
Transmitter
July 2007 - Rev 27-Jul-07
Features
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+25.0 dBm Output Third Order Intercept (OIP3)
35.0 dB Gain Control
2.0 dBm LO Drive Level
9.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
U1009-BD
Chip Device Layout
General Description
Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier. The use
of integrated LO doubler and LO buffer amplifier makes the provision
of the LO easier than for fundamental mixers at these frequencies. IF
and IF mixer inputs are provided through an external 180 degree
hybrid. This MMIC uses Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
XU1009-BD
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
320,190,110 mA
+0.3 VDC
0.0 dBm
-65 to +165 ^OC
-55 to MTTF Table³
MTTF Table³
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz
18.0
-
36.0
Frequency Range (RF) Lower Side Band
GHz
18.0
-
36.0
Frequency Range (LO)
GHz
8.0
-
19.5
Frequency Range (IF)
GHz
DC
-
3.0
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) ²
dB
-
14.0
-
dB
-
9.0
-
LO Input Drive (PLO)
dBm
-
+2.0
-
Isolation LO/RF @ LOx1
dB
-
15.0
-
Isolation LO/RF @ LOx2
Output Third Order Intercept (OIP3)^1,2
dB
-
5.0
-
dBm
-
+25.0
-
Drain Bias Voltage (Vd1,2,3)
VDC
-
+5.0 +5.5
Source Bias Voltage (Vss)
VDC
-
-5.0
-
Gate Bias Voltage (Vg1,2)
VDC
-1.2
-0.2
+0.1
Gate Bias Voltage (Vg3,4) Doubler, Mixer
VDC
-1.2
-0.5
+0.1
Supply Current (Id1) (Vd1=5.0V, Vg=-0.2V Typical)
mA
-
230
280
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
mA
-
140
170
Supply Current (Id3) (Vd3=5.0V, Vg=-0.5V Typical)
mA
-
75
90
Supply Current (Iss) (Vss=-5.0V)
mA
-
50
60
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.