XP1043-QH Datasheet, PDF (1/7 Pages) Mimix Broadband – 12.0-16.0 GHz Power Amplifier QFN, 4x4mm

XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Features
 32 dBm Saturated RF Power
 41 dBm Output IP3 Linearity
 17 dB Gain Control
 On-Chip Power Detector
 Lead-Free 4 mm 24-lead PQFN Package
 100% RF Testing
 RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1043-QH is a packaged linear power
amplifier that operates over the 12.0-16.0 GHz
frequency band. The device provides 21.5 dB gain
and 41 dBm Output Third Order Intercept Point
(OIP3) across the band and is offered in an industry
standard, fully molded 4x4mm QFN package. The
packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs pHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. This device is specially
designed for use in Point-to-Point Radio systems for
cellular backhaul applications, and is well suited for
other telecom applications such as SATCOM and
VSAT.
Ordering Information
Part Number
XP1043-QH-0G00
XP1043-QH-0G0T
XP1043-QH-EV1
Package
bulk quantity
tape and reel
evaluation module
Functional Schematic
nc GND GND VD1 VD2 VD3
GND 1
GND 2
nc
3
RF IN 4
GND 5
GND 6
18 GND
17 GND
16 nc
15 RF OUT
14 nc
13 nc
VG1 VG2 VG3 nc Vdet Vref
Pin Configuration
Pin No. Function Pin No. Function
1-2
Ground
13-14 Not Connected
3
Not Connected
15
RF Output
4
RF Input
16
Not Connected
5-6
Ground
17-18
Ground
7
Gate 1 Bias
19
Drain 3 Bias
8
Gate 2 Bias
20
Drain 2 Bias
9
Gate 3 Bias
21
Drain 1 Bias
10
Not Connected 22-23
Ground
11
Pwr Det
24
Not Connected
12
Pwr Det Ref
Absolute Maximum Ratings ^1,2
Parameter
Absolute Max.
Supply Voltage (Vd1,2,3)
+8.0 V
Supply Current (Id1,2,3)
1500 mA
Gate Bias Voltage (Vg1,2,3)
-2.4 V
Max Power Dissipation (Pdiss)
5.5W
RF Input Power
+19 dBm
Operating Temperature (Ta)
-55 °C to +85 °C
Storage Temperature (Tstg)
-65 °C to +150 °C
Channel Temperature (Tch)
165 °C
MSL Level (MSL)
MSL3
ESD Min.-Machine Model (MM)
Class A
ESD Min.-Human Body Model (HBM)
Class 1A
(1) Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power;
however, maximum total power dissipated is specified at 5.5 W
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] • Europe Tel: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: [phone]
• China Tel: [phone]
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.