XP1042-QT Datasheet, PDF (1/6 Pages) Mimix Broadband – 12.0-16.0 GHz Power Amplifier QFN, 3x3mm

XP1042-QT
Power Amplifier
12.0-16.0 GHz
Features
 21 dB Small Signal Gain
 25 dBm P1dB Compression Point
 38 dBm Output IP3 Linearity
 17 dB Gain Control with Bias Adjust
 3x3mm Standard QFN Package
 100% RF Testing
 RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1042-QT is a packaged driver amplifier that
operates over the 12.0-16.0 GHz frequency band.
The device provides 21 dB gain and 38 dBm Output
Third Order Intercept Point (OIP3) across the band
and is offered in an industry standard, fully molded
3x3mm QFN package. The device includes on-chip
ESD protection structures and DC by-pass
capacitors to ease the implementation and volume
assembly of the packaged part. The device is
manufactured in 0.5um GaAs PHEMT device
technology with BCB wafer coating to enhance
ruggedness and repeatability of performance. The
XP1042-QT is well suited for Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
Ordering Information
Part Number
XP1042-QT-0G00
XP1042-QT-0G0T
XP1042-QT-EV1
Package
bulk quantity
tape and reel
evaluation module
Rev. V1
Functional Block Diagram/Board Layout
nc Vd1 Vd2 Vd3
nc
1
nc
2
RF In
3
nc
4
12
nc
11
nc
10 RF Out
9
nc
Vg1 Vg2 Vg3 nc
Pin Configuration
Pin No. Function Pin No. Function
1-2 Not Connected
10
RF Output
3
RF Input
11-12 Not Connected
4
Not Connected
13
Drain 3 Bias
5
Gate 1 Bias
14
Drain 2 Bias
6
Gate 2 Bias
15
Drain 1 Bias
7
Gate 3 Bias
16
Not Connected
8-9 Not Connected
Absolute Maximum Ratings¹
Parameter
Absolute Max.
Supply Voltage (Vd1,2,3)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg1,2,3)
Max Power Dissipation (Pdiss)
RF Input Power
+8.0 V
550 mA
-2.4 V
2.8W
15 dBm
Operating Temperature (Ta)
-55 ºC to +85 ºC
Storage Temperature (Tstg)
Channel Temperature (Tch)²
-65 ºC to +165 ºC
150 ºC
ESD Min. - Machine Model (MM)
Class A
ESD Min. - Human Body Model (HBM) Class 1A
MSL Level
MSL3
(1) Operation of this device above any one of these parameters may
cause permanent damage.
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
1
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