XP1035-QH_16 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Power Amplifier

XP1035-QH
Power Amplifier
5.9 - 9.5 GHz
Features
 26 dB Small Signal Gain
 39 dBm Third Order Intercept Point (OIP3)
 Integrated Power Detector
 Lead-Free 4 mm 24-lead QFN Package
 100% RF Testing
 RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1035-QH is a packaged linear power
amplifier that operates over the 5.9-9.5 GHz
frequency band. The device provides 26 dB gain
and 39 dBm Output Third Order Intercept Point
(OIP3) across the band and is offered in an industry
standard, fully molded 4x4mm QFN package. The
packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs PHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. The XP1035-QH is
specifically designed for PtP radio applications and
is well suited for other telecom applications such as
SATCOM and VSAT.
Ordering Information ¹
Part Number
XP1035-QH-0G00
XP1035-QH-0G0T
Package
bulk quantity
tape and reel
XP1035-QH-EV1
evaluation module
1. Reference Application Note M513 for reel size information.
Functional Schematic
GND GND GND VD1 VD2 VD3
Rev. V1
GND
1
GND
2
GND
3
RFIN 4
GND
5
GND
6
18 GND
17 GND
16 GND
15 RFOUT
14 GND
13 GND
VG1 VG2 VG3 GND Vref Vdet
Pin Configuration ²
Pin No. Function Pin No. Function
1-3
Ground
12
Pwr Det
4
RF Input
13-14
Ground
5-6
Ground
15
RF Output
7
Gate 1 Bias
16-18
Ground
8
Gate 2 Bias
19
Drain 3 Bias
9
Gate 3 Bias
20
Drain 2 Bias
10
Ground
21
Drain 1 Bias
11
Pwr Det Ref. 22-24
Ground
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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