XP1017-BD Datasheet, PDF (1/8 Pages) Mimix Broadband – 30.0-36.0 GHz GaAs MMIC Power Amplifier

30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
Features
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
XP1017-BD
General Description
Mimix Broadband’s two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm. The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)¹
+6.0 VDC²
950 mA
+0.3 VDC
+15 dBm
-65 to +165 ºC
-55 to +85ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness ( S21)
dB
Reverse Isolation (S12)
dB
Output Power for 1 dB Compression (P1dB) ²
dBm
Output Third Order Intercept Point (OIP3)^1,2
dBm
Drain Bias Voltage (Vd1,2,3,4)
VDC
Gate Bias Voltage (Vg1,2,3,4)
VDC
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
mA
Detector (diff ) Output at 20 dBm³
VDC
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k .
Min.
30.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
440
0.3
Max.
36.0
-
-
-
-
-
-
-
+5.5
0.0
880
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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