XL1002-BD_15 Datasheet, PDF (1/11 Pages) M/A-COM Technology Solutions, Inc. – Low Noise Amplifier

XL1002-BD
Low Noise Amplifier
20.0-36.0 GHz
Features
 Balanced Design
 Excellent Input/Output Match
 Self-biased Architecture
 23.0 dB Small Signal Gain
 2.6 dB Noise Figure
 100% On-Wafer RF, DC and Noise Figure
Testing
 100% Visual Inspection to MIL-STD-883 Method
2010
 RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage balanced 20.0-36.0
GHz GaAs MMIC low noise amplifier has a small
signal gain of 23.0 dB with a noise figure of 2.6 dB
across the band. This MMIC uses M/A-COM Tech’s
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder
die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Ordering Information
Part Number
Package
XL1002-BD-000V
“V” - vacuum release
gel paks
XL1002-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)¹
+6.0 VDC
120 mA
+15.0 dBm
-65 °C to +165 °C
-55 °C to +85 °C
+175 °C
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
1
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